收藏本站
ZXM61P03F
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-30
-1.0
-1
100
V
μ A
nA
V
I D =-250 μ A, V GS =0V
V DS =-30V, V GS =0V
V GS = 20V, V DS =0V
I D =-250 μ A, V DS = V GS
Static Drain-Source On-State Resistance (1) R DS(on)
0.35
0.55
?
?
V GS =-10V, I D =-0.6A
V GS =-4.5V, I D =-0.3A
Forward Transconductance (3)
g fs
0.44
S
V DS =-10V,I D =-0.3A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
140
45
20
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
2.9
8.9
5.0
4.8
0.62
1.3
ns
ns
ns
nC
nC
nC
V DD =-15V, I D =-0.6A
R G =6.2 ? , R D =25 ?
(Refer to test circuit)
V DS =-24V,V GS =-10V,
I D =-0.6A
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V SD
t rr
Q rr
14.8
7.7
-0.95
V
ns
nC
T j =25°C, I S =-0.6A,
V GS =0V
T j =25°C, I F =-0.6A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXM62N03GTA MOSFET N-CH 30V ENHANCE SOT223
ZXM62P02E6TA MOSFET P-CH 20V 2.3A SOT23-6
ZXM62P03E6TA MOSFET P-CH 30V 2.6A SOT-23-6
ZXM64N02XTC MOSFET N-CHAN 20V MSOP8
ZXM64N035L3 MOSFET N-CH 35V 13A TO-220-3
ZXM64P02XTC MOSFET P-CHAN 20V MSOP8
ZXM64P035L3 MOSFET P-CH 35V 12A TO-220-3
ZXM64P03XTC MOSFET P-CHAN 30V MSOP8
相关代理商/技术参数
ZXM62N02E6 制造商:Diodes Incorporated 功能描述: 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXM62N02E6_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62N02E6TA 功能描述:MOSFET 20V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N02E6TC 功能描述:MOSFET 20V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXM62N03E6_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENTMODEMOSFET
ZXM62N03E6TA 功能描述:MOSFET 30V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N03E6TC 功能描述:MOSFET 30V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube